SPB100N03S2-03 G

SPB100N03S2-03G OptiMOS TM Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS(on) max. SMD version 3 mΩ 100 ID • Excellent Gate Charge x RDS(on) product (FOM) A P-TO263 -3 • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated; Halogen Free according to IEC61249-2-21 Type Package SPB100N03S2-03 P- TO263 -3 Marking PN0303 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID TC=25°C Value Unit A 100 100 ID puls 400 EAS 810 Repetitive avalanche energy, limited by Tjmax 2) EAR 30 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 300 W -55... +175 55/175/56 °C Pulsed drain current TC=25°C Avalanche energy, single pulse mJ ID=80A, V DD=25V, RGS=25Ω kV/µs IS=100A, VDS=24V, di/dt=200A/µs, Tjmax=175°C TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j , Tstg Page 1 2010-01-25 SPB100N03S2-03G Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 0.3 0.5 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA - - 62 - - 40 @ min. footprint @ 6 cm2 cooling area 3) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 2.1 3 4 Static Characteristics Drain-source breakdown voltage V V GS=0V, ID=1mA Gate threshold voltage, VGS = V DS ID =250µA Zero gate voltage drain current µA IDSS V DS=30V, VGS=0V, Tj=25°C - 0.01 1 V DS=30V, VGS=0V, Tj=125°C - 1 100 - 1 100 Gate-source leakage current IGSS nA V GS=20V, VDS=0V Drain-source on-state resistance mΩ RDS(on) V GS=10V, I D=80A - 2.5 3.3 V GS=10V, I D=80A, SMD version - 2.2 3 1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 233A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2010-01-25 SPB100N03S2-03G Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 71 142 - Dynamic Characteristics Transconductance gfs VDS ≥2*ID *RDS(on)max, S ID =100A Input capacitance Ciss VGS =0V, VDS =25V, - 5300 7020 pF Output capacitance Coss f=1MHz - 2450 3200 Reverse transfer capacitance Crss - 470 700 Turn-on delay time td(on) VDD =15V, VGS =10V, - 24 36 Rise time tr ID =100A, - 40 60 Turn-off delay time td(off) RG =2.2Ω - 44 66 Fall time tf - 39 59 - 26 34 - 45 68 - 113 150 - 5.6 - V - - 100 A - - 400 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =24V, ID =100A VDD =24V, ID =100A, nC VGS =0 to 10V Gate plateau voltage V(plateau) VDD =24V, ID =100A Reverse Diode Inverse diode continuous IS TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0V, IF =100A - 0.9 1.3 V Reverse recovery time trr VR =15V, IF =lS , - 79 100 ns Reverse recovery charge Qrr diF /dt=100A/µs - 109 136 nC Page 3 2010-01-25 SPB100N03S2-03G 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (T C) parameter: VGS≥ 6 V parameter: VGS≥ 10 V SPP100N03S2-03 320 SPP100N03S2-03 110 A W 90 80 ID P tot 240 200 70 60 160 50 120 40 30 80 20 40 0 10 0 20 40 60 80 0 100 120 140 160 °C 190 0 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( VDS ) Z thJC = f (t p) parameter : D = 0 , TC = 25 °C parameter : D = t p/T 10 3 SPP100N03S2-03 t = 20.0µs p 1 SPP100N03S2-03 10 0 100 µs RD S(o n) ID =V Z thJC DS /I D A 10 10 K/W 2 10 -1 10 -2 10 -3 D = 0.50 0.20 1 ms 0.10 0.05 single pulse 10 1 10 -1 10 0 10 1 V 10 2 10 -4 10 -5 10 0.02 0.01 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp VDS Page 4 2010-01-25 0 SPB100N03S2-03G 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (V DS); T j=25°C parameter: tp = 80 µs RDS(on) = f (I D) parameter: VGS SPP100N03S2-03 240 i V [V] GS a h 200 ID 180 160 140 120 g 100 Ω 4.5 b 4.8 c 5.0 d 5.2 e 5.5 f 5.8 g 6.0 h 7.0 i 10.0 8 7 5 4 h 3 60 i e 2 40 d 20 0 g 6 f 80 f 9 R DS(on) A SPP100N03S2-03 11 Ptot = 300W c ab 0 0.5 1 1.5 2 2.5 3 3.5 VGS [V] = f 5.8 1 V 4 0 5 0 g 6.0 h i 7.0 10.0 20 40 60 80 100 A VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max g fs = f(I D); T j=25°C parameter: tp = 80 µs parameter: g fs 200 180 A S 160 140 g fs 140 ID 140 ID 120 120 100 100 80 80 60 60 40 40 20 20 0 0 1 2 3 4 5 V 0 7 VGS Page 5 0 20 40 60 80 100 120 140 160 A 200 ID 2010-01-25 SPB100N03S2-03G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (T j) parameter : ID = 80 A, VGS = 10 V parameter: VGS = VDS SPP100N03S2-03 8 4 V 6 V GS(th) R DS(on) Ω 5 4 1.34 mA 3 268 µA 2.5 2 98% 3 1.5 typ 2 1 1 0.5 0 -60 -20 20 60 140 °C 100 0 -60 200 -20 20 60 °C 100 180 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (V DS) IF = f (V SD) parameter: VGS=0V, f=1 MHz parameter: T j , tp = 80 µs 10 5 10 pF 3 SPP100N03S2-03 A 10 3 Ciss 10 2 10 1 IF 4 C 10 Coss T j = 25 °C typ T j = 175 °C typ Crss T j = 25 °C (98%) T j = 175 °C (98%) 10 2 0 5 10 15 20 V VDS 30 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2010-01-25 SPB100N03S2-03G 13 Typ. avalanche energy 14 Typ. gate charge E AS = f (T j) VGS = f (QGate) par.: I D = 80 A, V DD = 25 V, R GS = 25 Ω parameter: ID = 100 A pulsed 850 SPP100N03S2-03 16 mJ V 12 600 VGS E AS 700 500 0,2 VDS max 10 0,8 VDS max 8 400 6 300 200 4 100 2 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 20 40 60 80 100 120 140 nC 170 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 36 SPP100N03S2-03 V(BR)DSS V 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 °C 200 Tj Page 7 2010-01-25 SPB100N03S2-03G Package Outline: TO263-3 Page 8 2010-01-25 SPB100N03S2-03G Page 9 2010-01-25